1 - 4 ? 2006 ixys all rights reserved ixys reserves the right to change limits, test conditions, and dimensions. 0623 ixff 24n100 i d25 =22a v dss = 1000 v r dson = 390 m ? ? hiperfet tm power mosfet i n high voltage isoplus i4-pac tm features ? hiperfet tm technology - low r dson - low gate charge for high frequency operation - unclamped inductive switching (uis) capability - dv/dt ruggedness - fast intrinsic reverse diode ? isoplus i4-pac tm high voltage package - isolated back surface - enlarged creepage towards heatsink - enlarged creepage between high voltage pins - application friendly pinout - high reliability - industry standard outline applications ? switched mode power supplies ? dc-dc converters ? resonant converters mosfet symbol conditions maximum ratings v dss t vj = 25c to 150c 1000 v v gs 20 v i d25 t c = 25c 22 a i d90 t c = 90c 15 a i f25 (diode) t c = 25c 120 a i f90 (diode) t c = 90c 75 a dv/dt v ds < v dss ; i f 100a;? di f /dt ? 100a/s; r g = 2 5 v/ns t vj = 150c e ar t c = 25c 64 mj symbol conditions characteristic values (t vj = 25c, unless otherwise specified) min. typ. max. r dson v gs = 10 v; i d = i d90 390 m v gsth v ds = 20 v; i d = 8 ma; 2.5 5 v i dss v ds = v dss ; v gs = 0 v; t vj = 25c 0.1 ma t vj = 125c 0.25 ma i gss v gs = 20 v; v ds = 0 v 200 na q g 250 nc q gs v gs = 10 v; v ds = 500 v; i d = 12 a 55 nc q gd 135 nc t d(on) 35 ns t r 35 ns t d(off) 75 ns t f 21 ns v f (diode) i f = 12 a; v gs = 0 v 1.5 v t rr (diode) i f = 24 a; -di/dt = 100 a/s; v ds = 100 v 250 ns r thjc 0.32 k/w v gs = 10 v; v ds = 500 v; i d = 12 a; r g = 1 5 1 2 1 5 p h a s e - o u t
2 - 4 ? 2006 ixys all rights reserved ixys reserves the right to change limits, test conditions, and dimensions. 0623 ixff 24n100 component symbol conditions maximum ratings t vj -55...+150 c t stg -55...+125 c v isol i isol 1 ma; 50/60 hz 2500 v~ f c mounting force with clip 20...120 n symbol conditions characteristic values min. typ. max. d s ,d a d pin - s pin 7.0 mm d s ,d a pin - backside metal 5.5 mm r thch with heatsink compound 0.15 k/w weight 9g dimensions in mm (1 mm = 0.0394") p h a s e - o u t
3 - 4 ? 2006 ixys all rights reserved ixys reserves the right to change limits, test conditions, and dimensions. 0623 ixff 24n100 0123456789 0 4 8 12 16 20 24 v ds [v] 10 v 7 v i d [a] 0 3 6 9 12151821242730 0 5 10 15 20 25 30 35 40 45 50 55 0 5 10 15 20 25 30 35 40 45 50 55 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 -50 -25 0 25 50 75 100 125 150 175 0 2 4 6 8 10 12 14 16 18 20 22 24 -50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 02468101214161820 0 4 8 12 16 20 24 6 v i d [a] v ds [v] v gs = 5 v 10 v 7 v 6 v v gs = 5 v i d [a] v ds [v] v gs = 10 v 6 v 5 v t j [c] r ds(on) [normalized] i d = 12 a i d = 24 a r ds(on) [normalized] i d [a] v gs = 10 v t vj = 125c t vj = 25c t c [c] i d [a] fig. 1. output characteristics @ 25c fig. 2. extended output characteristics @ 25c fig. 3. output characteristics @ 125c fig. 4. r ds(on) normalized to i d = 12 a value versus junction temperature fig. 5. r ds(on) normalized to i d = 12 a value versus drain current fig. 6. max. drain current vs. case temperature p h a s e - o u t
4 - 4 ? 2006 ixys all rights reserved ixys reserves the right to change limits, test conditions, and dimensions. 0623 ixff 24n100 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 5 10 15 20 25 30 35 40 45 0 1020304050 0 10 20 30 40 50 60 0 5 10 15 20 25 30 35 40 100 1000 10000 100000 c iss 0.00001 0.0001 0.001 0.01 0.1 1 10 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0 30 60 90 120 150 180 210 240 270 0 1 2 3 4 5 6 7 8 9 10 0.30.40.50.60.70.80.91.01.11.2 0 10 20 30 40 50 60 70 i d [a] v gs [v] t j = 125c t j = 25c t j = -40c i d [a] g fs [s] t j = -40c t j = 125c t j = 25c i s [a] v sd [v] v gs [v] q g [nc] t j = 125c t j = 25c v ds = 500 v i d = 12 a i g = 10 ma c oss c rss c [pf] v ds [v] r thjc [k/w] pulse width [s] fig. 7. input admittance fig. 8. transconductance fig. 9. forward voltage drop of intrinsic diode fig. 10. gate charge fig. 11. capacitance fig. 12. max. transient thermal resistance p h a s e - o u t
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